A metal consists of a lattice of atoms, each with a shell of electrons. This can also be known as a positive ionic lattice. The outer electrons are free to dissociate from their parent atoms and travel through the lattice, creating a 'sea' of electrons, making the metal a conductor. When an electrical potential difference (a voltage) is applied across the metal, the electrons drift from one end of the conductor to the other under the influence of the electric field.
Near room temperatures, the thermal motion of ions is the primary source of scattering of electrons (due to destructive interference of free electron waves on non-correlating potentials of ions), and is thus the prime cause of metal resistance. Imperfections of lattice also contribute into resistance, although their contribution in pure metals is negligible.
The larger the cross-sectional area of the conductor, the more electrons are available to carry the current, so the lower the resistance. The longer the conductor, the more scattering events occur in each electron's path through the material, so the higher the resistance. Different materials also affect the resistance.
In metals, the Fermi level lies in the conduction band (see Band Theory, below) giving rise to free conduction electrons. However, in semiconductors the position of the Fermi level is within the band gap, approximately half-way between the conduction band minimum and valence band maximum for intrinsic (undoped) semiconductors. This means that at 0 Kelvin, there are no free conduction electrons and the resistance is infinite. However, the resistance will continue to decrease as the charge carrier density in the conduction band increases. In extrinsic (doped) semiconductors, dopant atoms increase the majority charge carrier concentration by donating electrons to the conduction band or accepting holes in the valence band. For both types of donor or acceptor atoms, increasing the dopant density leads to a reduction in the...